The AlInGaN back barrier effect on DC characteristics of AlGaN/GaN high electron mobility transistor
Author:
Affiliation:
1. College of Science, Zhengzhou University of Aeronautics, Zhengzhou 450015, P. R. China
2. School of Physics and Engineering, Zhengzhou University, Zhengzhou 450001, P. R. China
Abstract
Publisher
World Scientific Pub Co Pte Lt
Subject
Condensed Matter Physics,Statistical and Nonlinear Physics
Link
https://www.worldscientific.com/doi/pdf/10.1142/S021797921950190X
Reference25 articles.
1. A method to determine the strain of the AlGaN barrier layer under the gate in AlGaN/AlN/GaN heterostructure field-effect transistors
2. A survey of Gallium Nitride HEMT for RF and high power applications
3. InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance
4. Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications
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