InGaN-channel high-electron-mobility transistor with enhanced linearity and high-temperature performance
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/11/i=9/a=094101/pdf
Reference30 articles.
1. High electron mobility transistor based on a GaN‐AlxGa1−xN heterojunction
2. AlGaN/GaN high electron mobility transistors with intentionally doped GaN buffer using propane as carbon precursor
3. N-polar GaN/AlGaN/GaN metal–insulator–semiconductor high-electron-mobility transistor formed on sapphire substrate with minimal step bunching
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2. Effects of Si δ-Doped Layer on an AlGaN/InGaN/GaN High Electron Mobility Transistor;Journal of Electronic Materials;2021-06-27
3. Comprehensive Annealing Effects on AlGaN/GaN Schottky Barrier Diodes With Different Work-Function Metals;IEEE Transactions on Electron Devices;2021-06
4. Dynamic characteristics after bias stress of GaN HEMTs with field plate on free‐standing GaN substrate;Electronics Letters;2021-05-02
5. Current-Collapse Suppression of High-Performance Lateral AlGaN/GaN Schottky Barrier Diodes by a Thick GaN Cap Layer;IEEE Electron Device Letters;2021-04
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