In situ metrology advances in MOCVD growth of GaN-based materials
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference6 articles.
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3. Real-time stress evolution during Si1-xGex Heteroepitaxy: Dislocations, islanding, and segregation
4. Stress evolution during metalorganic chemical vapor deposition of GaN
5. In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors
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