Temperature Drift of Silicon Photodiode Spectral Sensitivity
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Published:2023-02
Issue:2
Volume:66
Page:74-84
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ISSN:0735-2727
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Container-title:Radioelectronics and Communications Systems
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language:en
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Short-container-title:Radioelectron.Commun.Syst.
Author:
Voronko AndriyORCID, Novikov DenysORCID, Shymanovskyi OleksandrORCID
Reference14 articles.
1. J. R. Creighton, W. G. Breiland, D. D. Koleske, G. Thaler, M. H. Crawford, "Emissivity-correcting mid-infrared pyrometry for group-III nitride MOCVD temperature measurement and control," J. Cryst. Growth, v.310, n.6, p.1062 (2008). DOI: https://doi.org/10.1016/j.jcrysgro.2007.12.063. 2. S. I. Krukovskyi, V. Arikov, A. O. Voronko, V. S. Antonyuk, "Features of low-temperature GaAs formation for epitaxy device structures," J. Nano- Electron. Phys., v.14, n.2, p.02016 (2022). DOI: https://doi.org/10.21272/jnep.14(2).02016. 3. D. F. Storm, T. A. Growden, E. M. Cornuelle, P. R. Peri, T. Osadchy, J. W. Daulton, W.-D. Zhang, D. S. Katzer, M. T. Hardy, N. Nepal, R. Molnar, E. R. Brown, P. R. Berger, D. J. Smith, D. J. Meyer, "Dependence of growth temperature on the electrical properties and microstructure of MBE-grown AlN/GaN resonant tunneling diodes on sapphire," J. Vac. Sci. Technol. B, Nanotechnol. Microelectron. Mater. Process. Meas. Phenom., v.38, n.3 (2020). DOI: https://doi.org/10.1116/6.0000052. 4. H. Ghadi, J. F. McGlone, Z. Feng, A. F. M. A. U. Bhuiyan, H. Zhao, A. R. Arehart, S. A. Ringel, "Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β -Ga2O3," Appl. Phys. Lett., v.117, n.17 (2020). DOI: https://doi.org/10.1063/5.0025970. 5. M. Belousov, B. Volf, J. C. Ramer, E. A. Armour, A. Gurary, "In situ metrology advances in MOCVD growth of GaN-based materials," J. Cryst. Growth, v.272, n.1–4, p.94 (2004). DOI: https://doi.org/10.1016/j.jcrysgro.2004.08.080.
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