Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3-Reference-Cited by-同舟云学术

Influence of growth temperature on defect states throughout the bandgap of MOCVD-grown β-Ga2O3

Published:2020-10-26 Issue:17 Volume:117 Page:172106
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ghadi Hemant¹,McGlone Joe F.¹^ORCID,Feng Zixuan¹,Bhuiyan A F M Anhar Uddin¹^ORCID,Zhao Hongping¹²^ORCID,Arehart Aaron R.¹^ORCID,Ringel Steven A.¹²^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, The Ohio State University, Columbus, Ohio 43210, USA

2. Department of Materials Science and Engineering, The Ohio State University, Columbus, Ohio 43210, USA

Funder

National Science Foundation

Air Force Office of Scientific Research

Defense Threat Reduction Agency

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/am-pdf/10.1063/5.0025970

Reference47 articles.

1. Optical Absorption and Photoconductivity in the Band Edge ofβ−Ga2O3

2. Gallium Oxide

3. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates

4. A review of Ga2O3materials, processing, and devices

5. Editors' Choice—Review—Theory and Characterization of Doping and Defects in β-Ga2O3

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