In situ strain control during MOCVD growth of high-quality InP-based long wavelength distributed Bragg reflectors

Author:

Hoffman Richard W.,Murphy Michael,Cruel Jonathan,Belousov Michael,Volf Boris,Murray Chris,Armour Eric A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference7 articles.

1. The tension of metallic films deposited by electrolysis

2. Misfit stress in InGaAs/InP heteroepitaxial structures grown by vapor‐phase epitaxy

3. R.W. Hoffman, in: Hass and Thun (Eds.), Physics of Thin Films, Vol. 3, Academic Press, New York, 1966.

4. R.W. Hoffman Jr., Fifteenth Indium Phosphide and Related Materials Conference Proceedings, 2003, p. 40.

5. MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 [micro sign]m VCSELs

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1. Low-misfit epilayer analyses using in situ wafer curvature measurements;Journal of Vacuum Science & Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phenomena;2011-05

2. AlGaInP growth parameter optimisation during MOVPE for opto-electronic devices;Journal of Crystal Growth;2007-01

3. Feedback controlled growth of strain-balanced InGaAs multiple quantum wells in metal-organic vapour phase epitaxy using anin situcurvature sensor;Semiconductor Science and Technology;2006-07-24

4. In situ metrology advances in MOCVD growth of GaN-based materials;Journal of Crystal Growth;2004-12

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