MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 [micro sign]m VCSELs-Reference-Cited by-同舟云学术

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MOCVD InP/AlGaInAs distributed Bragg reflector for 1.55 [micro sign]m VCSELs

Published:2001 Issue:8 Volume:37 Page:500
ISSN:0013-5194
Container-title:Electronics Letters
language:en
Short-container-title:Electron. Lett.

Author:

Sagnes I.,Le Roux G.,Mériadec C.,Mereuta A.,Saint-Girons G.,Bensoussan M.

Publisher

Institution of Engineering and Technology (IET)

Subject

Electrical and Electronic Engineering

Link

https://digital-library.theiet.org/content/journals/10.1049/el_20010329?crawler=true&mimetype=application/pdf

Reference10 articles.

1. 64°C continuous-wave operation of 1.5-μm vertical-cavity laser

2. Long-wavelength (1.55-μm) vertical-cavity lasers with InGaAsP/InP-GaAs/AlAs DBR's by wafer fusion

3. +55°C pulse lasing at 1.56 [micro sign]m of all-monolithic InGaAlAs/InP vertical cavity lasers

4. Metamorphic DBR and tunnel-junction injection. A CW RT monolithic long-wavelength VCSEL

5. High-performance 1.6 [micro sign]m single-epitaxy top-emitting VCSEL

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1. Strain-free SESAMs with iron doped absorber for femtosecond fiber laser mode locking at 1560 nm;Optics Express;2022-06-01

2. Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode with an AlGaInAs/InP Distributed Bragg Reflector;Chinese Physics Letters;2013-03

3. Tensile-strained 1.3 μm InGaAs/InGaAlAs quantum well structure of high temperature characteristics;Optical and Quantum Electronics;2008-08

4. Passively modelocked surface-emitting semiconductor lasers;Physics Reports;2006-06

5. 2-2.7μm single frequency tunable Sb-based lasers operating in CW at RT: microcavity and external cavity VCSELs, DFB;SPIE Proceedings;2006-04-21

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