Fabrication of a 10 Gb/s InGaAs/InP Avalanche Photodiode with an AlGaInAs/InP Distributed Bragg Reflector
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/30/3/038501/pdf
Reference12 articles.
1. Single-Photon Detection at Telecom Wavelengths
2. Edge Gain Suppression of a Planar-Type InGaAs–InP Avalanche Photodiodes With Thin Multiplication Layers for 10-Gb/s Applications
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2. Quantitative analysis of edge breakdown effect of Geiger mode avalanche photo-diodes utilizing optical probe scanning method;Semiconductor Science and Technology;2022-04-01
3. Theoretical Achievement of THz Gain-Bandwidth Product of Wafer-Bonded InGaAs/Si Avalanche Photodiodes With Poly-Si Bonding Layer;IEEE Transactions on Electron Devices;2022-03
4. Shallow-Mesa InP Avalanche Photodiode with Ultralow Dark Current;Conference on Lasers and Electro-Optics;2020
5. Tapered InP nanowire arrays for efficient broadband high-speed single-photon detection;Nature Nanotechnology;2019-03-04
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