Effects of temperature coefficient of surface tension on oxygen transport in a small silicon Cz furnace
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference23 articles.
1. Oxygen transport under an axial magnetic field in Czochralski silicon growth
2. Bulk-flow versus thermal-capillary models for Czochralski growth of semiconductors
3. Application of turbulence modeling to the integrated hydrodynamic thermal-capillary model of Czochralski crystal growth of silicon
4. The Coriolis force effect on molten silicon convection in a rotating crucible
5. Oxygen transport analysis in Czochralski silicon melt by considering the oxygen evaporation from the melt surface
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1. Numerical Investigation of Effect of Temperature Profile Imposed on the Crucible Surface on Oxygen Incorporated at the Crystal Melt Interface for 450 mm Diameter Silicon Single Crystal Growth in Presence of CUSP Magnetic Field Using Czochralski Technique;Silicon;2020-09-14
2. Cz-Silicon Produced from Solar Grade and Recycled Materials. Part I: Bulk Properties and Formation of As-Grown Defects;Metallurgical and Materials Transactions E;2014-11-21
3. Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon;Measurement Science and Technology;2012-11-28
4. Role of marangoni tension effects on the melt convection in directional solidification process for multi-crystalline silicon ingots;Journal of Crystal Growth;2012-05
5. Effects of the furnace pressure on oxygen and silicon oxide distributions during the growth of multicrystalline silicon ingots by the directional solidification process;Journal of Crystal Growth;2011-03
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