Sensitivity analyses of furnace material properties in the Czochralski crystal growth method for silicon
Author:
Publisher
IOP Publishing
Subject
Applied Mathematics,Instrumentation,Engineering (miscellaneous)
Link
http://stacks.iop.org/0957-0233/24/i=1/a=015601/pdf
Reference27 articles.
1. Effect of crystal and crucible rotations on the interface shape of Czochralski grown silicon single crystals
2. Recent progress of crystal growth modeling and growth control
3. Thermal simulation of the Czochralski silicon growth process by three different models and comparison with experimental results
4. Global modelling of heat transfer in crystal growth furnaces
5. On the hot-zone design of Czochralski silicon growth for photovoltaic applications
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1. Data‐Driven Cz–Si Scale‐Up under Conditions of Partial Similarity;Crystal Research and Technology;2024-04-09
2. IN-SITU MEASUREMENT OF EMISSIVITY IN CRYSTAL GROWTH FURNACES;Proceeding of International Heat Transfer Conference 17;2023
3. Smart Design of Cz-Ge Crystal Growth Furnace and Process;Crystals;2022-12-05
4. Novel Way to Assess the Validity of Czochralski Growth Simulations;physica status solidi (a);2019-07-10
5. Impact of thermal history on defects formation in the last solid fraction of Cz silicon ingots;AIP Conference Proceedings;2018
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