Bulk-flow versus thermal-capillary models for Czochralski growth of semiconductors
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference69 articles.
1. Four test problems for the numerical simulation of flow in Czochralski crystal growth
2. Radial Solute Segregation in Czochralski Growth
3. Nonmixing Cells due to Crucible Rotation during Czochralski Crystal Growth
4. Simulated rotational instabilities in molten bismuth silicon oxide
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1. Partially-Averaged Navier-Stokes (PANS) approach for study of fluid flow and heat transfer characteristics in Czochralski melt;Journal of Crystal Growth;2018-01
2. Effects of temperature coefficient of surface tension on oxygen transport in a small silicon Cz furnace;Journal of Crystal Growth;2004-05
3. Global analysis of a small Czochralski furnace with rotating crystal and crucible;Journal of Crystal Growth;2003-07
4. Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon;Journal of Crystal Growth;1999-08
5. On the formation of rotational spoke patterns during the Czochralski growth of bismuth silicon oxide;Journal of Crystal Growth;1999-03
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