Comparison of three turbulence models for simulation of melt convection in Czochralski crystal growth of silicon
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference52 articles.
1. T. Abe, Silicon materials science and technology, Electrochemical Society Proceedings, Vol. 98-1, 1998, p. 157.
2. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth
3. Thermal-capillary analysis of Czochralski and liquid encapsulated Czochralski crystal growth
4. Mathematical Modelling of Heat Flow in Czochralski Crystal Pulling
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