Growth temperatures and the excess chlorine effect of N-Polar GaN growth via tri-halide vapor phase epitaxy
Author:
Funder
Japan Science and Technology Agency
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
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1. Thermodynamic analysis of oxide vapor phase epitaxy of GaN;Journal of Applied Physics;2023-08-28
2. A green, low-cost method to prepare GaN films by plasma enhanced chemical vapor deposition;Thin Solid Films;2020-09
3. Growth of Highly Crystalline GaN at High Growth Rate by Trihalide Vapor‐Phase Epitaxy;physica status solidi (b);2020-04
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