X-ray characterization technique for the assessment of surface damage in GaN wafers

Author:

Letts Edward,Sun Yimeng,Key Daryl,Jordan Benjamin,Hashimoto Tadao

Funder

DOE ARPA-E

DOE EERE SBIR Phase II

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference8 articles.

1. M.A. Briere, GaN on Si based power devices: an opportunity to significantly impact global energy consumption, Paper presented at CS MANTECH Conference, Portland, OR, May 2010.

2. Reduction of crack density in ammonothermal bulk GaN growth;Letts;J. Cryst. Growth,2016

3. J.K. Hite, M.A. Mastro, T.J. Anderson, L. Luna, J.C. Gallagher, A.P. Bowman, C.R. Eddy Jr., Homeopitaxial MOCVD GaN Growth on Free-Standing Substrates, IWBNS-X, Espoo, Finland.

4. Curvature and bow of bulk GaN substrates;Foronda;J. Appl. Phys.,2016

5. Free electron concentration dependent sub-bandgap optical absorption characterization of bulk GaN crystals;Pimputkar;J. Cryst. Growth,2015

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