Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method-Reference-Cited by-同舟云学术

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Two inch GaN substrates fabricated by the near equilibrium ammonothermal (NEAT) method

Published:2019-04-16 Issue:SC Volume:58 Page:SC1005
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Hashimoto Tadao,Letts Edward R.,Key Daryl,Jordan Benjamin

Funder

Advanced Research Projects Agency - Energy

U.S. Department of Energy

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/58/i=SC/a=SC1005/pdf

Reference31 articles.

1. Over 3.0 $\hbox{GW/cm}^{2}$ Figure-of-Merit GaN p-n Junction Diodes on Free-Standing GaN Substrates

2. High-Power, Long-Lifetime InGaN/GaN/AlGaN-Based Laser Diodes Grown on Pure GaN Substrates

3. Bulk and homoepitaxial GaN-growth and characterisation

4. Growth of bulk GaN single crystals by the pressure-controlled solution growth method

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1. Fabrication of free-standing GaN substrates using electrochemically formed porous separation layers;Applied Physics Express;2024-05-01

2. Role of carbon in n-type bulk GaN crystals;Journal of Crystal Growth;2024-04

3. Resistivity of manganese doped GaN grown by near equilibrium ammonothermal (NEAT) method;Journal of Crystal Growth;2023-11

4. Progress in Ammonothermal Crystal Growth of Gallium Nitride from 2017–2023: Process, Defects and Devices;Crystals;2023-06-23

5. Evolution of the Growth Mode and Its Consequences during Bulk Crystallization of GaN;Materials;2023-04-25

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