Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy-Reference-Cited by-同舟云学术

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Role of growth temperature on formation of single crystalline GaN nanorods on flexible titanium foil by laser molecular beam epitaxy

Published:2019-03 Issue: Volume:509 Page:23-28
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Ramesh C.,Tyagi P.,Abhiram G.,Gupta G.,Senthil Kumar M.,Kushvaha S.S.

Funder

Council of Scientific and Industrial Research

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

1. Comparing directed efficiency of III-nitride nanowire light-emitting diodes;Chesin;J. Nanophoto.,2014

2. Gallium nitride nanostructures: synthesis, characterization and applications;Thobeka;J. Cryst. Growth,2016

3. GaN based nanorods for solid state lighting;Li;J. Appl. Phys.,2012

4. Growth of III-nitrides on Si (1 1 1) by molecular beam epitaxy: doping, optical, and electrical properties;Calleja;J. Cryst. Growth,1999

5. Liquid-target reactive magnetron sputter epitaxy of high quality GaN (0001¯) nanorods on Si (111);Junaid;Mater. Sci. Semicond. Process.,2015

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2. Role of Surface Chemistry of Ta Metal Foil on the Growth of GaN Nanorods by Laser Molecular Beam Epitaxy and Their Field Emission Characteristics;ACS Applied Materials & Interfaces;2024-03-01

3. Growth and characterization of Mg-doped GaN and InGaN nanopillar-crystals based on steering-crystal-formed multi-crystalline Si substrates;Japanese Journal of Applied Physics;2023-12-15

4. X-ray scattering study of GaN nanowires grown on Ti/Al₂O₃ by molecular beam epitaxy;Journal of Applied Crystallography;2023-03-09

5. Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields;ACS Photonics;2021-05-12

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