Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields-Reference-Cited by-同舟云学术

Enhanced Radiative Efficiency in GaN Nanowires Grown on Sputtered TiNx: Effects of Surface Electric Fields

Published:2021-05-12 Issue:6 Volume:8 Page:1718-1725
ISSN:2330-4022
Container-title:ACS Photonics
language:en
Short-container-title:ACS Photonics

Author:

Auzelle Thomas¹^ORCID,Azadmand Mani¹,Flissikowski Timur¹,Ramsteiner Manfred¹,Morgenroth Katrin¹,Stemmler Carsten¹,Fernández-Garrido Sergio¹,Sanguinetti Stefano²,Grahn Holger T.¹,Geelhaar Lutz¹,Brandt Oliver¹^ORCID

Affiliation:

1. Paul-Drude-Institut für Festkörperelektronik, Leibniz-Institut im Forschungsverbund Berlin e.V., Hausvogteiplatz 5−7, 10117 Berlin, Germany

2. L-NESS and Dipartimento di Scienza dei Materiali, Università di Milano-Bicocca, Via R. Cozzi 55, 20125 Milano, Italy

Funder

Bundesministerium f?r Bildung und Forschung

Regione Lombardia

Ministerio de Econom?a y Competitividad

European Social Fund

Publisher

American Chemical Society (ACS)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Biotechnology,Electronic, Optical and Magnetic Materials

Link

https://pubs.acs.org/doi/pdf/10.1021/acsphotonics.1c00224

Reference67 articles.

1. Luminescence properties and defects in GaN nanocolumns grown by molecular beam epitaxy

2. Time-resolved spectroscopy on GaN nanocolumns grown by plasma assisted molecular beam epitaxy on Si substrates

3. Origin of the nonradiative decay of bound excitons in GaN nanowires

4. Epitaxial Growth of GaN Nanowires with High Structural Perfection on a Metallic TiN Film

5. Transient photoluminescence of shallow donor bound excitons in GaN

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