Tilt generation and phase separation in metamorphic GaInP buffers grown on GaAs substrates by metal-organic chemical vapor deposition
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference26 articles.
1. Effects of GaAs substrate misorientation on strain relaxation in InxGa1−xAs films and multilayers
2. Visible light-emitting diodes grown on optimized ∇x[InxGa1−x]P/GaP epitaxial transparent substrates with controlled dislocation density
3. Metamorphic InP/InGaAs double-heterojunction bipolar transistors on GaAs grown by molecular-beam epitaxy
4. InGaAs/InP single quantum well structure grown on GaAs substrate with linearly graded metamorphic InGaP buffer layer by solid source molecular beam epitaxy
5. High-efficiency GaInP∕GaAs∕InGaAs triple-junction solar cells grown inverted with a metamorphic bottom junction
Cited by 4 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Flexible four-junction inverted metamorphic AlGaInP/AlGaAs/ In0.17Ga0.83As/In0.47Ga0.53As solar cell;Solar Energy Materials and Solar Cells;2020-05
2. Control of threading dislocations by strain engineering in GaInP buffers grown on GaAs substrates;Thin Solid Films;2015-10
3. Optimization of InGaP metamorphic buffers grown by MOVPE;Journal of Crystal Growth;2015-03
4. Effects of substrate miscut on dislocation glide in metamorphic (Al)GaInP buffers;Journal of Crystal Growth;2013-10
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