InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
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1. Light‐emitting Diodes and Lasers;Group III‐Nitride Semiconductor Optoelectronics;2023-10-18
2. Explorations on Growth of Blue-Green-Yellow-Red InGaN Quantum Dots by Plasma-Assisted Molecular Beam Epitaxy;Nanomaterials;2022-02-26
3. Room-temperature solution-phase epitaxial nucleation of PbS quantum dots on rutile TiO2 (100);Nanoscale Advances;2020
4. Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices;ACS Applied Materials & Interfaces;2018-12-06
5. InN/GaN quantum dot superlattices: Charge-carrier states and surface electronic structure;International Journal of Modern Physics B;2018-02-26
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