Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices-Reference-Cited by-同舟云学术

Abnormal Stranski–Krastanov Mode Growth of Green InGaN Quantum Dots: Morphology, Optical Properties, and Applications in Light-Emitting Devices

Published:2018-12-06 Issue:1 Volume:11 Page:1228-1238
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Wang Lai¹,Wang Lei¹^ORCID,Yu Jiadong¹,Hao Zhibiao¹,Luo Yi¹,Sun Changzheng¹,Han Yanjun¹,Xiong Bing¹,Wang Jian¹,Li Hongtao¹

Affiliation:

1. Beijing National Research Center for Information Science and Technology (BNRist), Department of Electronic Engineering, Tsinghua University, Beijing 100084, P. R. China

Funder

Ministry of Science and Technology of the People's Republic of China

China Postdoctoral Science Foundation

Tsinghua University

National Natural Science Foundation of China

Science and Technology Challenging Project

Publisher

American Chemical Society (ACS)

Subject

General Materials Science

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.8b16767

Reference60 articles.

1. InGaN quantum dot green light-emitting diodes with negligible blue shift of electroluminescence peak wavelength

2. Broadband full-color monolithic InGaN light-emitting diodes by self-assembled InGaN quantum dots

3. InGaN/GaN self-organized quantum dot lasers grown by molecular beam epitaxy

4. Small-signal modulation and differential gain of red-emitting (λ = 630 nm) InGaN/GaN quantum dot lasers

5. Low threshold continuous-wave lasing of yellow-green InGaN-QD vertical-cavity surface-emitting lasers

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