Current status and future prospects of GaN-based LEDs and LDs-Reference-Cited by-同舟云学术

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Current status and future prospects of GaN-based LEDs and LDs

Published:2004-09 Issue:12 Volume:201 Page:2712-2716
ISSN:0031-8965
Container-title:phys. stat. sol. (a)
language:en
Short-container-title:phys. stat. sol. (a)

Author:

Mukai T.,Nagahama S.,Kozaki T.,Sano M.,Morita D.,Yanamoto T.,Yamamoto M.,Akashi K.,Masui S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structure, defects, and optical properties of commensurate GaN/ZnGeN₂/GaN double heterojunctions;Journal of Materials Chemistry C;2023

2. Interlayer Excitons in Transition Metal Dichalcogenide Semiconductors for 2D Optoelectronics;Advanced Materials;2022-01-05

3. Investigation of Micromorphology and Carrier Recombination Dynamics for InGaN/GaN Multi-Quantum Dots Grown by Molecular Beam Epitaxy;Crystals;2021-10-27

4. A laser pumping double-light-source module with photon-recycling;Current Developments in Lens Design and Optical Engineering XX;2019-09-05

5. Droplet Controlled Growth Dynamics in Molecular Beam Epitaxy of Nitride Semiconductors;Scientific Reports;2018-07-26

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