Defect reduction in (11–22) semipolar GaN with embedded InN islands on m-plane sapphire
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference29 articles.
1. Spontaneous polarization and piezoelectric constants of III-V nitrides
2. Quantum-Confined Stark Effect in an AlGaN/GaN/AlGaN Single Quantum Well Structure
3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes
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5. Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities
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1. Effect of Flux Rate Variation at Fixed V/III Ratio on Semi-Polar (112¯2) GaN: Crystal Quality and Surface Morphology Study;Crystals;2022-02-11
2. Influence of Nucleation Layers on MOVPE Growth of Semipolar ($$11{\bar{2}}2$$) GaN on m-Plane Sapphire;Journal of Electronic Materials;2021-05-21
3. Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template;Crystal Growth & Design;2019-09-12
4. Effect of high‐temperature AlN buffer on anisotropy of semi‐polar (11‐22) GaN with two pressure growth stages;Micro & Nano Letters;2019-08
5. In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN;Crystal Growth & Design;2017-08-14
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