Study of green light-emitting diodes grown on semipolar (11–22) GaN/m-sapphire with different crystal qualities
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference15 articles.
1. Growth and characterisation of semi-polar InGaN/GaN MQW structures
2. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy
3. Built-in electric-field effects in wurtzite AlGaN/GaN quantum wells
4. Quantum-Confined Stark Effect due to Piezoelectric Fields in GaInN Strained Quantum Wells
5. Defect reduction in (112̄0) a-plane gallium nitride via lateral epitaxial overgrowth by hydride vapor-phase epitaxy
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1. The Correlation between Surface V-Shaped Defects and Local Breakdown Phenomena in GaN-Based LEDs;Photonics;2023-09-29
2. Pulse‐Modulation Controllable Monolithic Full‐Color Semipolar GaN‐based Light Emitting Diodes;Advanced Optical Materials;2023-07-23
3. Anisotropic Strain Relaxation in Semipolar (112¯2) InGaN/GaN Superlattice Relaxed Templates;Nanomaterials;2022-08-30
4. Surface Structure-Controlled Monolithic Multiple Color Semipolar GaN-based Light-Emitting Diodes;Applied Science and Convergence Technology;2022-03-31
5. A Systematic Exploration of InGaN/GaN Quantum Well-Based Light Emitting Diodes on Semipolar Orientations;Optics and Spectroscopy;2022-03
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