In Situ Site-Specific Gallium Filling and Nanograin Growth for Blocking of Threading Defects in Semipolar (112̅2) GaN

Author:

Wu Zhengyuan12,Song Pengyu12,Shih Tienmo13,Pang Linna4,Chen Li1,Lin Guangyang1ORCID,Lin Dingqu1,Li Cheng1,Liu Ran2,Shen Wenzhong4,Kang Junyong1,Fang Zhilai12ORCID

Affiliation:

1. Collaborative Innovation Center for Optoelectronic Semiconductors and Efficient Devices, Department of Physics, Xiamen University, Xiamen 361005, China

2. Engineering Research Center of Advanced Lighting Technology, Ministry of Education, and School of Information Science and Technology, Fudan University, Shanghai 200433, China

3. CKX Laboratories, Changkeng, 362421, China

4. Key Laboratory of Artificial Structures and Quantum Control (Ministry of Education), Department of Physics, Shanghai Jiao Tong University, Shanghai 200240, China

Funder

National Natural Science Foundation of China

Publisher

American Chemical Society (ACS)

Subject

Condensed Matter Physics,General Materials Science,General Chemistry

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