Impact of a Strained Periodic Multilayer on the Surface and Crystal Quality of a Semipolar (11–22) GaN Template
Author:
Affiliation:
1. Low Dimensional Materials Research Centre, Department of Physics, Faculty of Science, University of Malaya, 50603 Kuala Lumpur, Malaysia
2. Materials Department, University of California, Santa Barbara, United States
Funder
Ministry of Higher Education, Malaysia
Universiti Malaya
Collaborative Research in Engineering, Science and Technology Center
Publisher
American Chemical Society (ACS)
Subject
Condensed Matter Physics,General Materials Science,General Chemistry
Link
https://pubs.acs.org/doi/pdf/10.1021/acs.cgd.9b00206
Reference34 articles.
1. Nitride-based semiconductors for blue and green light-emitting devices
2. Blue, Green, and Amber InGaN/GaN Light-Emitting Diodes on Semipolar {11-22} GaN Bulk Substrates
3. An experimental study about the influence of well thickness on the electroluminescence of InGaN/GaN multiple quantum wells
4. Internal quantum efficiency improvement of InGaN/GaN multiple quantum well green light-emitting diodes
5. Influence of InGaN growth rate on the localization states and optical properties of InGaN/GaN multiple quantum wells
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