In situ X-ray measurements of MOVPE growth of InxGa1−xN single quantum wells
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference31 articles.
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4. Characterization of initial growth stage of GaInN multi-layered structure by X-ray CTR scattering method
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2. Atomic layer deposition of InN using trimethylindium and ammonia plasma;Journal of Vacuum Science & Technology A;2019-03
3. Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity;Applied Physics Letters;2017-06-26
4. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials;Progress in Crystal Growth and Characterization of Materials;2016-06
5. MOCVD of Nitrides;Handbook of Crystal Growth;2015
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