Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity-Reference-Cited by-同舟云学术

Role of threading dislocations in strain relaxation during GaInN growth monitored by real-time X-ray reflectivity

Published:2017-06-26 Issue:26 Volume:110 Page:262105
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Ju Guangxu¹,Tabuchi Masao²,Takeda Yoshikazu³⁴,Amano Hiroshi¹⁵

Affiliation:

1. Akasaki Research Center and Department of Electrical Engineering and Computer Science, Graduate School of Engineering, Nagoya University, Nagoya 464-8603, Japan

2. Synchrotron Radiation Research Center, Nagoya University, Nagoya 464-8603, Japan

3. Synchrotron Radiation Center, Aichi Science and Technology Foundation, Seto 489-0965, Japan

4. Nagoya Industrial Science Research Institute, Nagoya 464-8603, Japan

5. Center for Integrated Research of Future Electronics, Institute of Materials and Systems for Sustainability, Nagoya University, Nagoya 464-8603, Japan

Funder

New Energy and Industrial Technology Development Organization (NEDO)

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4990687

Reference31 articles.

1. Development of GaN-based blue LEDs and metalorganic vapor phase epitaxy of GaN and related materials

2. Phosphor-Free, Color-Tunable Monolithic InGaN Light-Emitting Diodes

3. X-ray characterization of GaN and related materials at growth temperatures–system design and measurements

4. Continuous in situ X-ray reflectivity investigation on epitaxial growth of InGaN by metalorganic vapor phase epitaxy

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