Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy-Reference-Cited by-同舟云学术

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Optical and morphological study of misoriented GaAs substrates exposed to bismuth flow using in situ spectral reflectance and atomic force microscopy

Published:2012-08 Issue:1 Volume:353 Page:77-82
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Massoudi I.,Habchi M.M.,Rebey A.,El Jani B.

Funder

DGRST

Third World Academy of Sciences (TWAS)

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference36 articles.

1. Influence of Bi impurity as a surfactant during the growth of GaN by metalorganic vapor phase epitaxy

2. Surfactants in epitaxial growth

3. The use of a surfactant (Sb) to induce triple period ordering in GaInP

4. Bi: Perfect surfactant for Ge growth on Si(111)?

5. Influence of surfactants in Ge and Si epitaxy on Si(001)

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. In situ spectral reflectance analysis of the early stages of GaN thermal decomposition;Optik;2022-09

2. Effect of InAs buffer layer thickness on physical properties of InAsBi heterostructures grown by MOCVD;Journal of Crystal Growth;2020-11

3. Analysis of in situ thin films epitaxy by reflectance spectroscopy: Effect of growth parameters;Superlattices and Microstructures;2019-07

4. MOVPE growth of InAsBi/InAs/GaAs heterostructure analyzed by in situ spectral reflectance;Journal of Materials Science: Materials in Electronics;2017-02-25

5. The influence of In composition on properties of In x Ga 1-x As/GaAs structures grown by MOVPE and in situ monitored by spectral reflectance;Superlattices and Microstructures;2017-01

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