Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE-Reference-Cited by-同舟云学术

Semibulk InGaN: A novel approach for thick, single phase, epitaxial InGaN layers grown by MOVPE

Published:2013-05 Issue: Volume:370 Page:57-62
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Pantzas K.,El Gmili Y.,Dickerson J.,Gautier S.,Largeau L.,Mauguin O.,Patriarche G.,Suresh S.,Moudakir T.,Bishop C.,Ahaitouf A.,Rivera T.,Tanguy C.,Voss P.L.,Ougazzaden A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference30 articles.

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