High-quality InGaN∕GaN heterojunctions and their photovoltaic effects
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3056628
Reference11 articles.
1. Absorption and Emission of Hexagonal InN. Evidence of Narrow Fundamental Band Gap
2. Unusual properties of the fundamental band gap of InN
3. Proceedings of the Fourth World Conference on Photovoltaic Energy Conversion;Barnett A.,2006
4. InN: A material with photovoltaic promise and challenges
5. Variation of band bending at the surface of Mg-doped InGaN: Evidence ofp-type conductivity across the composition range
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