Numerical investigation of pulsed chemical vapor deposition of aluminum nitride to reduce particle formation
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference24 articles.
1. Organometallic Vapor-Phase Epitaxy: Theory and Practice;Stringfellow,1999
2. Fundamental chemistry and modeling of group-III nitride MOVPE;Creighton;Journal of Crystal Growth,2007
3. Nature of the parasitic reaction during AlGaInN OMVPE;Creighton;Journal of Crystal Growth,2004
4. A reaction-transport model for AlGaN MOVPE growth;Mihopoulos;Journal of Crystal Growth,1998
5. Parasitic reaction and its effect on the growth of AlN by metal organic chemical vapor deposition;Zhao;Journal of Crystal Growth,2006
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2. A numerical study of the effect of pulse duration on preventing particle generation during the AlN pulsed MOCVD process;Materials Science in Semiconductor Processing;2022-09
3. Numerical Study of Growth Rate and Purge Time in the AlN Pulsed MOCVD Process;Crystals;2022-08-05
4. Review—Review of Research on AlGaN MOCVD Growth;ECS Journal of Solid State Science and Technology;2020-01-22
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