Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE-Reference-Cited by-同舟云学术

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Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE

Published:2011-07 Issue:1 Volume:326 Page:37-41
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Lai Fang-I,Kuo Shou-Yi,Chen Wei-Chun,Lin Woei-Tyng,Wang Wei-Lin,Chang Li,Hsiao Chien-Nan,Chiang Chung-Hao

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference14 articles.

1. Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

2. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

3. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy

4. Growth of hexagonal and cubic InN nanowires using MOCVD with different growth temperatures

5. Fabrication of nanostructured indium nitride by PA-MOMBE

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers;Journal of Alloys and Compounds;2021-12

2. Monocrystalline InN Films Grown at High Rate by Organometallic Vapor Phase Epitaxy with Nitrogen Plasma Activation Supported by Gyrotron Radiation;Japanese Journal of Applied Physics;2013-11-01

3. Low-Temperature Grown INN Films Based on Sapphire Substrate with ECR-Plasma Enhanced MOCVD;PRICM;2013-09-06

4. Molecular beam epitaxy of low-bandgap InGaN;Molecular Beam Epitaxy;2013

5. Influence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBE;ECS Journal of Solid State Science and Technology;2013

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