Influence of V/III Flow Ratio on Growth of InN on GaN by PA-MOMBE
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference42 articles.
1. Indium nitride (InN): A review on growth, characterization, and properties
2. Progress and prospects of group-III nitride semiconductors
3. Terahertz emission by InN
4. Unusual properties of the fundamental band gap of InN
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1. Ammonia-free epitaxy of single-crystal InN using a plasma-integrated gas-injection module;Applied Materials Today;2022-06
2. Optical, electrical, and chemical characterization of nanostructured InxGa1-xN formed by high fluence In+ ion implantation into GaN;Optical Materials;2021-01
3. Growth of Catalyst-Free Hexagonal Pyramid-Like InN Nanocolumns on Nitrided Si(111) Substrates via Radio-Frequency Metal–Organic Molecular Beam Epitaxy;Crystals;2019-06-05
4. Investigations on morphology, growth mode and indium incorporation in MOCVD grown InGaN/n-GaN heterostructures;Optik;2018-12
5. Influence of nitrogen flux on structural and optical properties of InN films fabricated by PAMBE;Vacuum;2017-10
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