Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy

Published:2002-11-15 Issue:Part 2, No. 11B Volume:41 Page:L1321-L1324
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Fu-Hsiang,Hwang Jih-Sheng,Yang Ying-Jay,Chen Kuei-Hsien,Wang Jih-Hsiang

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/41/i=11B/a=L1321/pdf

Cited by 22 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of dislocations and carrier concentration in limiting the electron mobility of InN films grown by plasma assisted molecular beam epitaxy;Journal of Applied Physics;2018-01-07

2. A comparative study of InN growth on quartz, silicon, C-sapphire and bulk GaN substrates by RF magnetron sputtering;Journal of Materials Science: Materials in Electronics;2017-03-24

3. Microstructures of InN film on 4H-SiC (0001) substrate grown by RF-MBE;Journal of Semiconductors;2015-08

4. The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition;Science China Physics, Mechanics and Astronomy;2012-05-19

5. Heteroepitaxial growth of InN on GaN intermediate layer by PA-MOMBE;Journal of Crystal Growth;2011-07

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