The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition-Reference-Cited by-同舟云学术

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The growth and properties of an m-plane InN epilayer on LiAlO2 (100) by metal-organic chemical vapor deposition

Published:2012-05-19 Issue:7 Volume:55 Page:1249-1252
ISSN:1674-7348
Container-title:Science China Physics, Mechanics and Astronomy
language:en
Short-container-title:Sci. China Phys. Mech. Astron.

Author:

Xie ZiLi,Zhang Rong,Fu DeYi,Liu Bin,Xiu XiangQian,Hua XueMei,Zhao Hong,Chen Peng,Han Ping,Shi Yi,Zheng YouDou

Publisher

Springer Science and Business Media LLC

Subject

General Physics and Astronomy

Link

http://link.springer.com/content/pdf/10.1007/s11433-012-4717-6.pdf

Reference27 articles.

1. Nanishi Y, Saito Y, Yamaguchi T. RF-molecular beam epitaxy growth and properties of InN and related alloys. Jpn J Appl Phys, 2003, 42: 2549–2559

2. Yang F H, Hwang J S, Yang Y J, et al. Growth of high-quality epitaxial InN film with high-speed reactant gas by organometallic vapor-phase epitaxy. Jpn J Appl Phys, 2002, 41: L1321–L1324

3. Xie Z L, Zhang R, Liu B, et al. The high mobility InN film grown by MOCVD with GaN buffer layer. J Cryst Growth, 2007, 298: 409–412

4. Matsuoka T, Nakao M, Okamoto H, et al. Experimental consideration of optical band-gap energy of wurtzite InN. Jpn J Appl Phys, 2003, 42: 2288–2290

5. Tsuchiya T, Ohnishi M, Wakahara A, et al. Initial stages of InN thin film growth onto MgAl2O4 (111) and alpha-Al2O3 (00 center dot 1) substrates. J Cryst Growth, 2000, 220(3): 191–196

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolarm-Plane (101̄0) InN Film by Hard X-ray Photoelectron Spectroscopy;Japanese Journal of Applied Physics;2013-08-01

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