Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolarm-Plane (101̄0) InN Film by Hard X-ray Photoelectron Spectroscopy-Reference-Cited by-同舟云学术

Investigation of the Effect of Oxygen on the Near-Surface Electron Accumulation in Nonpolarm-Plane (101̄0) InN Film by Hard X-ray Photoelectron Spectroscopy

Published:2013-08-01 Issue:8S Volume:52 Page:08JD01
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yang Anli,Yamashita Yoshiyuki,Yoshikawa Hideki,Yamaguchi Tomohiro,Imura Masataka,Kaneko Masamitsu,Ueda Shigenori,Sakata Osami,Nanishi Yasushi,Kobayashi Keisuke

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference31 articles.

1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys

2. Molecular beam epitaxy growth of GaN, AlN and InN

3. When group-III nitrides go infrared: New properties and perspectives

4. Surface charge accumulation of InN films grown by molecular-beam epitaxy

5. Intrinsic Electron Accumulation at Clean InN Surfaces

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