Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy-Reference-Cited by-同舟云学术

Surface and bulk electronic structures of unintentionally and Mg-doped In0.7Ga0.3N epilayer by hard X-ray photoelectron spectroscopy

Published:2018-03-07 Issue:9 Volume:123 Page:095701
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:Journal of Applied Physics

Author:

Imura Masataka¹^ORCID,Tsuda Shunsuke²,Takeda Hiroyuki¹,Nagata Takahiro¹,Banal Ryan G.¹,Yoshikawa Hideki³⁴,Yang AnLi¹⁴,Yamashita Yoshiyuki¹⁴,Kobayashi Keisuke⁴⁵,Koide Yasuo¹^ORCID,Yamaguchi Tomohiro⁶⁷,Kaneko Masamitsu⁷,Uematsu Nao⁷,Wang Ke⁷,Araki Tsutomu⁷,Nanishi Yasushi⁷

Affiliation:

1. National Institute for Materials Science (NIMS), 1-1 Namiki, Tsukuba, Ibaraki 305-0044, Japan

2. NIMS, 3-13 Sakura, Tsukuba, Ibaraki 305-0003, Japan

3. NIMS, 1-2-1 Sengen, Tsukuba, Ibaraki 305-0047, Japan

4. Synchrotron X-ray Station at SPring-8, NIMS, 1-1-1 Kouto, Sayo-cho, Sayo, Hyogo 679-5148, Japan

5. Materials Sciences Research Center, Japan Atomic Energy Agency, 1-1-1 Kouto, Sayo-cho, Sayo, Hyogo 679-5148, Japan

6. Faculty of Engineering, Kogakuin University, 2665-1 Nakano-machi, Hachiouji, Tokyo 192-0015, Japan

7. Faculty of Science and Engineering, Ritsumeikan University, 1-1-1 Noji-Higashi, Kusatsu, Shiga 525-8577, Japan

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.5016574

Reference47 articles.

1. Structure and electronic properties of InN and In-rich group III-nitride alloys

2. Unstable Region of Solid Composition in Ternary Nitride Alloys Grown by Metalorganic Vapor-Phase Epitaxy

3. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

4. Indium nitride (InN): A review on growth, characterization, and properties

5. Small band gap bowing in In1−xGaxN alloys

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