The high mobility InN film grown by MOCVD with GaN buffer layer
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference12 articles.
1. RF-Molecular Beam Epitaxy Growth and Properties of InN and Related Alloys
2. Growth of High-Quality Epitaxial InN Film with High-Speed Reactant Gas by Organometallic Vapor-Phase Epitaxy
3. High-Quality InN Film Grown on a Low-Temperature-Grown GaN Intermediate Layer by Plasma-Assisted Molecular-Beam Epitaxy
4. Experimental Consideration of Optical Band-Gap Energy of Wurtzite InN
5. Initial stages of InN thin film growth onto MgAl2O4(111) and α-Al2O3(00·1) substrates
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1. Influence of low-temperature cap layer thickness on the structure and luminescence of InGaN/GaN multiple quantum wells;Micro and Nanostructures;2024-10
2. Preparation of InN films at different substrate temperatures and the effect of operating temperatures on the carrier transmission characteristics of p-NiO/n-InN heterojunction;Vacuum;2021-12
3. Impact of the Deposition Temperature on the Structural and Electrical Properties of InN Films Grown on Self-Standing Diamond Substrates by Low-Temperature ECR-MOCVD;Coatings;2020-12-04
4. Growth of InN films by radical-enhanced metal organic chemical vapor deposition at a low temperature of 200 °C;Japanese Journal of Applied Physics;2017-05-26
5. Studies on growth of N-polar InN films by pulsed metal-organic vapor phase epitaxy;Chemical Research in Chinese Universities;2016-07-12
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