Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers-Reference-Cited by-同舟云学术

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Growth temperature effect on physical and mechanical properties of nitrogen rich InN epilayers

Published:2021-12 Issue: Volume:885 Page:160951
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Benzarti Z.,Sekrafi T.,Khalfallah A.,Bougrioua Z.,Vignaud D.,Evaristo M.,Cavaleiro A.

Funder

Fundação para a Ciência e a Tecnologia

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference59 articles.

1. High responsivity of GaN p-i-np-i-n photodiode by using low-temperature interlayer;Lin;Appl. Phys. Lett.,2007

2. High quantum efficiency InGaN/GaN solar cells with 2.95 eV band gap;Neufeld;Appl. Phys. Lett.,2008

3. InGaN solar cell requirements for highefficiency integrated III-nitride/non-III-nitride tandem photovoltaic devices;Toledo;J. Appl. Phys.,2012

4. Effect of SiN treatment on optical properties of InxGa1-xN/GaN MQW blue LEDs;Benzarti;J. Electron. Mater.,2017

5. Absorption and emission of hexagonal InN. Evidence of narrow fundamental band gap;Davydov;Phys. Stat. Sol. B,2002

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1. Recent Advances in the Development of Thin Films;Coatings;2024-07-12

2. Study on the preparation of InN films under different substrates and nitrogen-argon flow ratios and the effect of operating temperature on carrier transport in p-NiO/n-InN heterojunctions;Vacuum;2024-02

3. Understanding the influence of physical properties on the mechanical characteristics of Mg-doped GaN thin films;Materials Chemistry and Physics;2023-10

4. Optical, surface, and structural studies of InN thin films grown on sapphire by molecular beam epitaxy;Journal of Vacuum Science & Technology A;2023-07-10

5. Mechanical Properties and Creep Behavior of Undoped and Mg-Doped GaN Thin Films Grown by Metal–Organic Chemical Vapor Deposition;Coatings;2023-06-16

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