Effects of static magnetic fields on thermal fluctuations in the melt of industrial CZ-Si crystal growth
Author:
Publisher
Elsevier BV
Subject
Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics
Reference22 articles.
1. Silicon melt convection in large size Czochralski crucibles
2. Defect engineering of Czochralski single-crystal silicon
3. Application of magnetic fields in industrial growth of silicon single crystals
4. Oxygen distribution at a solid–liquid interface of silicon under transverse magnetic fields
5. Transient three-dimensional numerical computation for unsteady oxygen concentration in a silicon melt during a Czochralski process under a cusp-shaped magnetic field
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1. The Effect of Physical Property Parameters of the Insulation Material Inside the Heat Shield on the Growth of Czochralski Silicon Crystal;Silicon;2023-11-28
2. Investigation of Oxygen Behavior under Different Melt Flow, Diffusion Boundary Layer, and Crystal-Melt Interface in a 300 mm Silicon Crystal Growth with Cusp Magnetic Field;Coatings;2023-09-18
3. Three-dimensional modelling of 300 mm Czochralski silicon crystal growth with a transverse magnetic field;CrystEngComm;2023
4. Preparation of NiCrBSi-WC/Co coatings by stable magnetic field assisted supersonic plasma spraying and its wear resistance mechanism;Materials Characterization;2022-12
5. Three-dimensional characteristics of turbulent flow and heat transfer in Czochralski silicon melt with different cusp magnetic field configurations;Physics of Fluids;2022-02
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