Oxygen distribution at a solid–liquid interface of silicon under transverse magnetic fields-Reference-Cited by-同舟云学术

Oxygen distribution at a solid–liquid interface of silicon under transverse magnetic fields

Published:2000-05 Issue:3-4 Volume:212 Page:429-437
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Kakimoto K,Ozoe H

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference15 articles.

1. Melt motion in a Czochralski puller with a weak transverse magnetic field

2. Oxygen transport in magnetic Czochralski growth of silicon

3. Centrifugal pumping during Czochralski silicon growth with a strong transverse magnetic field

4. J. Baumgaartl, M. Gewald, R. Rupp, J. Stierlen, G. Mueller, Proceedings of the Seventh European Symposium on Materials and Fluid Sciences in Microgravity, Oxford, UK, 1989, p. 10.

5. Melt motion in a Czochralski crystal puller with an axial magnetic field: Uncertainty in the thermal constants

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