Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth-Reference-Cited by-同舟云学术

Thermodynamic Analysis of Dissolved Oxygen in a Silicon Melt and the Effect of Processing Parameters on the Oxygen Distribution in Single-crystal Silicon During Czochralski Growth

Published:2022-09-03 Issue:2 Volume:15 Page:1049-1062
ISSN:1876-990X
Container-title:Silicon
language:en
Short-container-title:Silicon

Author:

Li Tai,Zhao Liang,Lv Guoqiang,Ma Wenhui,Zhang Mengyu,Huang Zhenling,Zhao Liang

Funder

Key Research and Development Project of Yunnan Province

Publisher

Springer Science and Business Media LLC

Subject

Electronic, Optical and Magnetic Materials

Link

https://link.springer.com/content/pdf/10.1007/s12633-022-02059-x.pdf

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