Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD-Reference-Cited by-同舟云学术

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Optimal activation condition of nonpolar a-plane p-type GaN layers grown on r-plane sapphire substrates by MOCVD

Published:2011-07 Issue:1 Volume:326 Page:98-102
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Son Ji-Su,Hyeon Baik Kwang,Gon Seo Yong,Song Hooyoung,Hoon Kim Ji,Hwang Sung-Min,Kim Tae-Geun

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference27 articles.

1. High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well Structures

2. High internal electric field in a graded-width InGaN/GaN quantum well: Accurate determination by time-resolved photoluminescence spectroscopy

3. Nitride semiconductors free of electrostatic fields for efficient white light-emitting diodes

4. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

5. First-Moment Analysis of Polarized Light Emission from InGaN/GaN Light-Emitting Diodes Prepared on Semipolar Planes

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Polarities of GaN Substrates on Surface Morphologies and Physical Properties of Epitaxial Mg‐Doped GaN Films Grown by MOCVD;physica status solidi (a);2022-04-15

2. Macrodefects investigation in a-GaN films;AIP Advances;2022-02-01

3. Semipolar GaN grown on foreign substrates: a review;Semiconductor Science and Technology;2012-01-19

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