Chemical lift-off of (11–22) semipolar GaN using periodic triangular cavities-Reference-Cited by-同舟云学术

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Chemical lift-off of (11–22) semipolar GaN using periodic triangular cavities

Published:2012-01 Issue:1 Volume:338 Page:134-138
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Jeon Dae-Woo,Lee Seung-Jae,Jeong Tak,Baek Jong Hyeob,Park Jae-Woo,Jang Lee-Woon,Kim Myoung,Lee In-Hwan,Ju Jin-Woo

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference17 articles.

1. Nonpolar and Semipolar III-Nitride Light-Emitting Diodes: Achievements and Challenges

2. Demonstration of a semipolar (101¯3¯) InGaN∕GaN green light emitting diode

3. Milliwatt Power Blue InGaN/GaN Light-Emitting Diodes on Semipolar GaN Templates

4. Dislocation-Freem-Plane InGaN/GaN Light-Emitting Diodes onm-Plane GaN Single Crystals

5. Comparison of InGaN/GaN light emitting diodes grown on m -plane and a -plane bulk GaN substrates

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The InGaN Material System and Blue/Green Emitters;Light-Emitting Diodes;2019

2. Effect of HCl Chemical Reaction Etching on Thick Semipolar (11–22) GaN Growth by Hydride Vapor Phase Epitaxy;Journal of Nanoscience and Nanotechnology;2016-11-01

3. Self-Separation of Large Freestanding Semipolar {112̄2} GaN Films Usingr-Plane Patterned Sapphire Substrates;Japanese Journal of Applied Physics;2013-08-01

4. Fabricated InGaN Membranes through a Wet Lateral Etching Process;Applied Physics Express;2013-08-01

5. Separation of laterally overgrown GaN template by using selective electrochemical etching;Journal of Alloys and Compounds;2012-11

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