Separation of laterally overgrown GaN template by using selective electrochemical etching-Reference-Cited by-同舟云学术

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Separation of laterally overgrown GaN template by using selective electrochemical etching

Published:2012-11 Issue: Volume:542 Page:59-62
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Jeon Dae-Woo,Cho Han-Su,Park Jae-Woo,Jang Lee-Woon,Kim Myoung,Jeon Ju-Won,Ju Jin-Woo,Baek Jong Hyeob,Lee In-Hwan

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference25 articles.

1. Advantages of InGaN light-emitting diodes with GaN-InGaN-GaN barriers

2. Substrates for gallium nitride epitaxy

3. Characterization of GaN/InGaN multiple quantum wells grown on sapphire substrates by nano-scale epitaxial lateral overgrowth technique

4. Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

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1. Enhanced Performance of InGaN Light-Emitting Diodes via High-Quality GaN and Embedded Air Voids Grown on Hexagonal 3D Serpentine Mask Sapphire Substrates;ACS Photonics;2023-09-11

2. Deterioration of near-UV GaN-based LEDs in seawater vapour;Results in Physics;2020-12

3. Comparative Research of GaN Growth Mechanisms on Patterned Sapphire Substrates with Sputtered AlON Nucleation Layers;Materials;2020-09-05

4. Epitaxial lift-off for III-nitride devices;III-Nitride Electronic Devices;2019

5. A scalable, flexible and transparent GaN based heterojunction piezoelectric nanogenerator for bending, air-flow and vibration energy harvesting;Applied Energy;2018-07

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