Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition

Published:2011-02 Issue:6 Volume:509 Page:2952-2956
ISSN:0925-8388
Container-title:Journal of Alloys and Compounds
language:en
Short-container-title:Journal of Alloys and Compounds

Author:

Oh Tae Su,Park Ah Hyun,Jeong Hyun,Kim Hun,Seo Tae Hoon,Lee Yong Seok,Jeong Mun Seok,Lee Kang Jea,Suh Eun-Kyung

Publisher

Elsevier BV

Subject

Materials Chemistry,Metals and Alloys,Mechanical Engineering,Mechanics of Materials

Reference20 articles.

1. Solid-State Light Sources Getting Smart

2. Ultraviolet light-emitting diodes based on group three nitrides

3. Light output improvement of InGaN ultraviolet light-emitting diodes by using wet-etched stripe-patterned sapphire substrates

4. Lateral epitaxial patterned sapphire InGaN/GaN MQW LEDs

5. Enhanced output power of near-ultraviolet InGaN-GaN LEDs grown on patterned sapphire substrates

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2. A study of GaN nucleation and coalescence in the initial growth stages on nanoscale patterned sapphire substrates via MOCVD;CrystEngComm;2018

3. Surface studies and photoluminescence of GaN epitaxial layers grown by MOCVD technique for applications of solar cells and light emitting devices;Journal of Alloys and Compounds;2016-07

4. Nucleation mechanism for epitaxial growth of GaN on patterned sapphire substrates;Journal of Alloys and Compounds;2014-10

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