Fabricated InGaN Membranes through a Wet Lateral Etching Process-Reference-Cited by-同舟云学术

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Fabricated InGaN Membranes through a Wet Lateral Etching Process

Published:2013-08-01 Issue:8 Volume:6 Page:086501
ISSN:1882-0778
Container-title:Applied Physics Express
language:
Short-container-title:Appl. Phys. Express

Author:

Wu Kaun-Chun,Huang Kun-Pin,Cheng Po-Fu,Tseng Wang-Po,Huang Yu-Chieh,Jiang Ren-Hao,Wang Jing-Hao,Shieh Bing-Cheng,Lai Chun-Feng,Lin Chia-Feng

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/6/i=8/a=086501/pdf

Reference25 articles.

1. White Light Emission of Monolithic Carbon-Implanted InGaN–GaN Light-Emitting Diodes

2. Investigation of a Metal–Insulator–Semiconductor Pt/Mixed Al[sub 2]O[sub 3] and Ga[sub 2]O[sub 3] Insulator/AlGaN Hydrogen Sensor

3. Improved crystal quality and performance of GaN-based light-emitting diodes by decreasing the slanted angle of patterned sapphire

4. Nitride-Based LEDs With 800<tex>$^circhboxC$</tex>Grown p-AlInGaN–GaN Double-Cap Layers

5. Improving light output power of InGaN-based light emitting diodes with pattern-nanoporous p-type GaN:Mg surfaces

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Electrochemical Etching of Nitrogen Ion‐Implanted Gallium Nitride – A Route to 3D Nanoporous Patterning;physica status solidi (b);2024-04-16

2. Nanoporous AlGaN-based distributed Bragg reflectors with enhanced luminescence for wafer-scale ultraviolet light-emitting devices;Vacuum;2022-10

3. Freestanding GaN substrate enabled by dual-stack multilayer graphene via hydride vapor phase epitaxy;Applied Surface Science;2020-10

4. Thin-film flip-chip UVB LEDs realized by electrochemical etching;Applied Physics Letters;2020-03-23

5. Wafer‐scale epitaxial lift‐off of GaN using bandgap‐selective photoenhanced wet etching;physica status solidi (b);2017-04-27

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