High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates-Reference-Cited by-同舟云学术

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High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates

Published:2011-08 Issue:1 Volume:329 Page:33-38
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Miasojedovas S.,Mauder C.,Krotkus S.,Kadys A.,Malinauskas T.,Jarašiu¯nas K.,Heuken M.,Kalisch H.,Vescan A.

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference21 articles.

1. High-quality bulk a-plane GaN sliced from boules in comparison to heteroepitaxially grown thick films on r-plane sapphire

2. Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2

3. Development of m-plane GaN anisotropic film properties during MOVPE growth on LiAlO2 substrates

4. Basal Plane Stacking-Fault Related Anisotropy in X-ray Rocking Curve Widths ofm-Plane GaN

5. All-optical characterization of carrier lifetimes and diffusion lengths in MOCVD-, ELO-, and HVPE- grown GaN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Stimulated emission threshold in thick GaN epilayers: interplay between charge carrier and photon dynamics;Optics & Laser Technology;2021-02

2. Structural, optical and dispersion characteristics of nanocrystalline GaN films prepared by MOVPE;Optics & Laser Technology;2012-03

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