Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2-Reference-Cited by-同舟云学术

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Impact of nitridation on structural and optical properties of MOVPE-grown m-plane GaN layers on LiAlO2

Published:2009-01-14 Issue:S2 Volume:6 Page:S482-S485
ISSN:1862-6351
Container-title:physica status solidi (c)
language:en
Short-container-title:Phys. Status Solidi (c)

Author:

Mauder C.,Rahimzadeh Khoshroo L.,Behmenburg H.,Reuters B.,Bösing M.,Rzheutskii M. V.,Lutsenko E. V.,Yablonskii G. P.,Woitok J. F.,Chou M. M. C.,Heuken M.,Kalisch H.,Jansen R. H.

Publisher

Wiley

Subject

Condensed Matter Physics

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Band Tailing on Photo- and Electroluminescence Polarization of m-Plane InGaN/GaN Quantum Well Heterostructures;Journal of Applied Spectroscopy;2016-01

2. Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100);Applied Physics Express;2012-10-02

3. High-excitation luminescence properties of m-plane GaN grown on LiAlO2 substrates;Journal of Crystal Growth;2011-08

4. Effect of indium incorporation on optical and structural properties of m-plane InGaN/GaN MQW on LiAlO2 substrates;Journal of Crystal Growth;2011-01

5. Striated surface morphology and crystal orientation of m-plane GaN films grown on γ-LiAlO2(100);Applied Physics Letters;2010-06-07

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