Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$

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Formation of a Monocrystalline, $M$-Plane AlN Layer by the Nitridation of $\gamma$-LiAlO$_{2}$(100)

Published:2012-10-02 Issue:10 Volume:5 Page:105501
ISSN:1882-0778
Container-title:Applied Physics Express
language:en
Short-container-title:Appl. Phys. Express

Author:

Wang Kwang-Ru,Mauder Christof,Wan Qian,Jenichen Bernd,Woitok Joachim F.,Grahn Holger T.,Kalisch Holger,Heuken Michael,Vescan Andrei,Trampert Achim

Publisher

IOP Publishing

Subject

General Physics and Astronomy,General Engineering

Link

http://stacks.iop.org/1882-0786/5/i=10/a=105501/pdf

Cited by 5 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Green gap in GaN-based light-emitting diodes: in perspective;Critical Reviews in Solid State and Materials Sciences;2020-09-16

2. High-temperature thermal annealing of nonpolar (1 01¯0) AlN layers sputtered on (1 01¯0) sapphire;Journal of Crystal Growth;2018-09

3. Semipolar AlN on Si(100): Technology and properties;Microelectronic Engineering;2017-06

4. Growth and Characterization of M-Plane GaN Thin Films Grown on γ-LiAlO2 (100) Substrates;Scanning;2017

5. Nucleation and growth of (10͞11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy;Scientific Reports;2016-05-17

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